The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BU508DFI

BU508DFI

SKU: BU508DFI
BU508DFI Transistor Silicon NPN CASE: TO218F MAKE: ST Microelectronics - STM
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 12 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
BU508DFI Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218F
Manufacturer ST Microelectronics - STM
Vbr CEO 700
Max. PD (W) 125
t(f) Max. (S) 500n-
Min hFE 10
Ic Max. (A) 8.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 79952
Back