The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BU508DR
View detailed images (12)

BU508DR

SKU: BU508DR
BU508DR Transistor Silicon NPN CASE: TO3P MAKE: Vishay Semiconductor
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 45 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer Vishay Semiconductor
Vbr CEO 700
Max. PD (W) 125
Min hFE 4.5
Ic Max. (A) 8.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 135
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 4.5
SKU 79950
Back