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BU508FI
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BU508FI

SKU: BU508FI
BU508FI Transistor Silicon NPN CASE: TO218F MAKE: ST Microelectronics - STM
Product specifications
Type Transistor Silicon NPN
Case TO218F
Manufacturer ST Microelectronics - STM
Vbr CBO 1.5k
Vbr CEO 700
Max. PD (W) 60
Min hFE 2.3
Ic Max. (A) 5.0
@Ic (test) (A) 4.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 480m
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 139625
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