BU808FI

SKU: BU808FI

BU808FI Transistor Silicon NPN CASE: TO218F MAKE: SGS Thomson

Datasheet

BU808FI Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218F
Manufacturer	SGS Thomson
Vbr CEO	700
Max. PD (W)	50.0
t(f) Max. (S)	.8u-
Min hFE	25
Ic Max. (A)	5.0
@Ic (test) (A)	5.0
Mat.	Silicon Logic
Polarity	NPN
t(stor) Max. (S)	2.0u-
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1400 V
Maximum Collector-Emitter Voltage \|Vce\|	700 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	25
SKU	349897

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