| Case | TO218 | |
| Type | Transistor N Channel IGBT | |
| Manufacturer | Siemens Semiconductors | |
| Max. Burst (V) | 1.0k | |
| Max. PD (W) | 310 | |
| fCO #5 (Hz) | 2.0n | |
| td(on) Max (S) | 50n | |
| t(f) Max. (S) | 300n | |
| Ic Max. (A) | 35 | |
| I(CES) Max. (A) | 250u | |
| I(ges) Max (A) | 100n | |
| Tr Max. (s) | 200n | |
| VGE(th) Max. (V) | 6.5 | |
| Pinout Equivalence Number | 3-48 | |
| Surface Mounted Yes/No | NO | |
| SKU | 82106 | |