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BUR11
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BUR11

SKU: BUR11
BUR11 Transistor Silicon NPN CASE: TO63 MAKE: SGS Thomson
Product specifications
Type Transistor Silicon NPN
Case TO63
Manufacturer SGS Thomson
Vbr CBO 300
Vbr CEO 200
Max. PD (W) 175
t(f) Max. (S) .30u
Min hFE 15
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) .50u
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 250 pF
Forward Current Transfer Ratio (hFE), MIN 15
SKU 573567
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