BUR12

SKU: BUR12

BUR12 Transistor Silicon NPN CASE: TO59 MAKE: SGS Thomson

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO59
Manufacturer	SGS Thomson
Vbr CBO	200
Vbr CEO	120
Max. PD (W)	40
t(f) Max. (S)	150n
Max. hFE	140
Min hFE	80
Ic Max. (A)	10
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Tr Max. (s)	200n
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	150 pF
Forward Current Transfer Ratio (hFE), MIN	80
SKU	573568

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