BUR13

SKU: BUR13

BUR13 Transistor Silicon NPN CASE: TO63 MAKE: SGS Thomson

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO63
Manufacturer	SGS Thomson
Vbr CBO	200
Vbr CEO	125
Max. PD (W)	250
t(f) Max. (S)	.50u
Max. hFE	100
Min hFE	20
Ic Max. (A)	70
@Ic (test) (A)	25
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
Tr Max. (s)	1.0u
Derate Above 25°C	1.4
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	250 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	125 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	70 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	573569

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