BUR50S

SKU: BUR50S

BUR50S Transistor Silicon NPN CASE: TO3 MAKE: ST Microelectronics - STM

Price:

£38.39 Inc. VAT (£31.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	ST Microelectronics - STM
Vbr CBO	200
Vbr CEO	125
t(f) Max. (S)	500n
Max. hFE	100
Min hFE	20
Ic Max. (A)	70
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
Tr Max. (s)	1.2u
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	350 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	125 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	70 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	408692

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