| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Motorola Semiconductor | |
| Vbr CEO | 250 | |
| Max. PD (W) | 350 | |
| t(f) Max. (S) | 300n | |
| Min hFE | 20 | |
| Ic Max. (A) | 40 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | NPN | |
| Oper. Temp (°C) Max. | 200 | |
| @VCE (V) | 4.0 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 350 W | |
| Maximum Collector-Base Voltage |Vcb| | 350 V | |
| Maximum Collector-Emitter Voltage |Vce| | 200 V | |
| Maximum Collector Current |Ic max| | 40 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 552853 | |