| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Manufacturer |
Motorola Semiconductor |
| Case |
TO3 |
| Vbr CEO |
400 |
| Max. PD (W) |
250 |
| t(f) Max. (S) |
400n |
| Min hFE |
8.0 |
| Ic Max. (A) |
30 |
| @Ic (test) (A) |
20 |
| Icbo Max. @Vcb Max. (A) |
1.0m+ |
| Polarity |
NPN |
| Tr Max. (s) |
700n |
| Derate Above 25°C |
1.4 |
| Oper. Temp (°C) Max. |
200 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
250 W |
| Maximum Collector-Base Voltage |Vcb| |
850 V |
| Maximum Collector-Emitter Voltage |Vce| |
400 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
30 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Forward Current Transfer Ratio (hFE), MIN |
8 |
| SKU |
82059 |