BUT11F

SKU: BUT11F

BUT11F Transistor Silicon NPN CASE: TO220F MAKE: Fairchild Semiconductor

Datasheet

BUT11F Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Fairchild Semiconductor
Vbr CEO	400
Max. PD (W)	20
t(f) Max. (S)	800n
Min hFE	25-
Ic Max. (A)	5.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	850 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	9 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	115806

Back