BUT12F

SKU: BUT12F

BUT12F Transistor Silicon NPN CASE: SOT186 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT186
Manufacturer	Philips
Vbr CEO	400
Max. PD (W)	23
t(f) Max. (S)	300n
Min hFE	30
Ic Max. (A)	8.0
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	570m
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	23 W
Maximum Collector-Base Voltage \|Vcb\|	850 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	10
SKU	561986

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