BUT18F

SKU: BUT18F

BUT18F Transistor Silicon NPN CASE: TO220F MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Philips
Vbr CEO	400
Max. PD (W)	20
t(f) Max. (S)	800n
Min hFE	10
Ic Max. (A)	6.0
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	570m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	850 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	200 °C
Forward Current Transfer Ratio (hFE), MIN	20
SKU	115808

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