BUT21AF

SKU: BUT21AF

BUT21AF Transistor Silicon NPN CASE: TO220F MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Philips
Vbr CEO	350
Max. PD (W)	20
t(f) Max. (S)	250n
Min hFE	9.0
Ic Max. (A)	5.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Oper. Temp (°C) Max.	140
@VCE (V)	1.5
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	700 V
Maximum Collector-Emitter Voltage \|Vce\|	350 V
Maximum Emitter-Base Voltage \|Veb\|	1.5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Forward Current Transfer Ratio (hFE), MIN	25
SKU	1272378

Back