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BUT30V
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BUT30V

SKU: BUT30V
BUT30V Transistor Silicon NPN CASE: SOT227A MAKE: SGS Thomson
Datasheet
BUT30V Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT227A
Manufacturer SGS Thomson
Vbr CEO 125
Ckts Per Dev. 1
Max. PD (W) 250
t(f) Max. (S) 200n
Ic Max. (A) 100
@Ic (test) (A) 100
Polarity NPN
Therm Res. (J-C) 0.5
VCE(sat) Max. 1.5
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 3-52
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 27
SKU 82081
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