BUV12

SKU: BUV12

BUV12 Transistor Silicon NPN CASE: TO3 MAKE: Motorola Semiconductor

Datasheet

BUV12 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Motorola Semiconductor
Vbr CBO	300
Vbr CEO	250
Max. PD (W)	150
t(f) Max. (S)	500n
Max. hFE	60
Min hFE	20
Ic Max. (A)	20
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	1.5m
Polarity	NPN
Trans. Freq (Hz) Min.	8.0M
Oper. Temp (°C) Max.	200
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	8 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	115812

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