BUV21N

SKU: BUV21N

BUV21N Transistor Silicon NPN CASE: TO3 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Motorola Semiconductor
Vbr CBO	220
Vbr CEO	160
Max. PD (W)	250
t(f) Max. (S)	200n
Max. hFE	60
Min hFE	15
Ic Max. (A)	40
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	3.0m
Polarity	NPN
Tr Max. (s)	1.2u
Trans. Freq (Hz) Min.	8.0M
Oper. Temp (°C) Max.	200
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	250 W
Maximum Collector-Base Voltage \|Vcb\|	220 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	40 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	8 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	553247

Back