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BUV298V
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BUV298V

SKU: BUV298V
BUV298V Transistor Silicon NPN CASE: SOT227A MAKE: SGS Thomson
Datasheet
BUV298V Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT227A
Manufacturer SGS Thomson
Vbr CEO 450
Ckts Per Dev. 1
Max. PD (W) 250
t(f) Max. (S) 0.4u
Ic Max. (A) 50
@Ic (test) (A) 32
Polarity NPN
Therm Res. (J-C) 0.5
VCE(sat) Max. 2.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 3-52
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 850 V
Maximum Collector-Emitter Voltage |Vce| 450 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 80 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 12
SKU 81933
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