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Manufacturer | Inchange Semiconductor - ISC | |
Case | TO218 | |
Type | Transistor Silicon NPN | |
Vbr CEO | 400 | |
Max. PD (W) | 100 | |
t(f) Max. (S) | 800n | |
Ic Max. (A) | 30 | |
Icbo Max. @Vcb Max. (A) | 500u+ | |
Polarity | NPN | |
Tr Max. (s) | 1.0u | |
Derate Above 25°C | 666m | |
Oper. Temp (°C) Max. | 175 | |
Pinout Equivalence Number | 3-17 | |
Surface Mounted Yes/No | NO | |
Maximum Collector Power Dissipation (Pc) | 150 W | |
Maximum Collector-Base Voltage |Vcb| | 850 V | |
Maximum Collector-Emitter Voltage |Vce| | 400 V | |
Maximum Emitter-Base Voltage |Veb| | 7 V | |
Maximum Collector Current |Ic max| | 10 A | |
Max. Operating Junction Temperature (Tj) | 200 °C | |
Collector Capacitance (Cc) | 250 pF | |
Transition Frequency (ft): | 5 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 10 | |
SKU | 83422 |