| BUV51 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | SGS Thomson | |
| Vbr CEO | 200 | |
| Max. PD (W) | 150 | |
| t(f) Max. (S) | 300n | |
| Ic Max. (A) | 28 | |
| Icbo Max. @Vcb Max. (A) | 500u+ | |
| Polarity | NPN | |
| Tr Max. (s) | 600n | |
| Derate Above 25°C | 854m | |
| Oper. Temp (°C) Max. | 175 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 150 W | |
| Maximum Collector-Base Voltage |Vcb| | 300 V | |
| Maximum Collector-Emitter Voltage |Vce| | 200 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 10 | |
| SKU | 82602 | |