| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO3 |
| Manufacturer |
NXP Semiconductors |
| Vbr CEO |
350 |
| Max. PD (W) |
100 |
| Derate (Amb) (W/°C) |
570m |
| t(f) Max. (S) |
300n- |
| Ic Max. (A) |
10 |
| Icbo Max. @Vcb Max. (A) |
500u |
| Polarity |
PNP |
| Tr Max. (s) |
300n- |
| R(sat) (Û) |
600m |
| Oper. Temp (°C) Max. |
175 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
100 W |
| Maximum Collector-Base Voltage |Vcb| |
400 V |
| Maximum Collector-Emitter Voltage |Vce| |
350 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
10 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Forward Current Transfer Ratio (hFE), MIN |
10 |
| SKU |
83033 |