BUW36

SKU: BUW36

BUW36 Transistor Silicon NPN CASE: TO3 MAKE: Generic

Datasheet

BUW36 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Central Semiconductor
Vbr CEO	900
Max. PD (W)	120
t(f) Max. (S)	350n-
Min hFE	8.0
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Tr Max. (s)	400n-
R(sat) (Û)	300m
Derate Above 25°C	684m
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	900 V
Maximum Collector-Emitter Voltage \|Vce\|	450 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Forward Current Transfer Ratio (hFE), MIN	15
SKU	372631

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