| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3P |
| Manufacturer |
NXP Semiconductors |
| Vbr CEO |
125 |
| Max. PD (W) |
150 |
| t(f) Max. (S) |
300n |
| Ic Max. (A) |
25 |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| Polarity |
NPN |
| Tr Max. (s) |
600n |
| Derate Above 25°C |
1.0 |
| Oper. Temp (°C) Max. |
200 |
| Pinout Equivalence Number |
3-17 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
150 W |
| Maximum Collector-Base Voltage |Vcb| |
250 V |
| Maximum Collector-Emitter Voltage |Vce| |
125 V |
| Maximum Collector Current |Ic max| |
40 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Forward Current Transfer Ratio (hFE), MIN |
10 |
| SKU |
83636 |