Weight |
0.01 kg
|
Case |
TO220 |
Type |
Transistor Silicon NPN |
Manufacturer |
ON Semiconductor |
Vbr CEO |
450 |
Max. PD (W) |
50 |
t(f) Max. (S) |
400n |
Max. hFE |
50- |
Min hFE |
30 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
100m |
Icbo Max. @Vcb Max. (A) |
200u |
Polarity |
NPN |
R(sat) (Û) |
1.3 |
Derate Above 25°C |
400m |
Trans. Freq (Hz) Min. |
4.0M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
40 W |
Maximum Collector-Base Voltage |Vcb| |
1000 V |
Maximum Collector-Emitter Voltage |Vce| |
500 V |
Maximum Emitter-Base Voltage |Veb| |
10 V |
Maximum Collector Current |Ic max| |
3 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
5 |
SKU |
80096 |