Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon NPN |
Manufacturer |
Philips |
Vbr CEO |
800 |
Max. PD (W) |
80 |
t(f) Max. (S) |
500n |
Min hFE |
2.5 |
Ic Max. (A) |
6.0 |
@Ic (test) (A) |
4.5 |
Icbo Max. @Vcb Max. (A) |
2.0m |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
7.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
62 W |
Maximum Collector-Base Voltage |Vcb| |
500 V |
Maximum Collector-Emitter Voltage |Vce| |
300 V |
Maximum Collector Current |Ic max| |
6 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
3 MHz |
Forward Current Transfer Ratio (hFE), MIN |
2.5 |
SKU |
82832 |