C106N

SKU: C106N

C106N Semiconductor CASE: TO202AB MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Semiconductor
Case	TO202AB
Manufacturer	General Electric Solid State
Vbr CBO	30
Vbr CEO	10
Max. PD (W)	250m
C(ob) (F)	50p
Derate (Amb) (W/°C)	1.8m
Dv/Dt Worst Case	8.0-
Firing Char-Igt Max.	200u
Firing Char-Vgt Max.	800m
hfe	50
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
I(h) Max. (A)	3.0m
Id(off) Max. (A)	10u
It(stat) Max. (A)	4.0
Polarity	PNP
Supp Curr. I(TSM)	20+
t(switch) Off Typ. Time (S)	40u
t(switch) Off Typ. Time (S)	1.2u
V(drm) Max.	800
V(T) Max.	2.2
Trans. Freq (Hz) Min.	1.2M
@VCE (test) (V)	6.0
@Temp. (test) (°C)	25
@Temp. (test) (°C)	30
Oper. Temp (°C) Min	-40
Oper. Temp (°C) Max.	110
@It (A)	4.0
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	50 pF
Transition Frequency (ft):	1.2 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	1292608