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C112N
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C112N

SKU: C112N
C112N Semiconductor CASE: TO220 MAKE: General Electric
Product specifications
Type Semiconductor
Case TO220
Manufacturer General Electric
Vbr CBO 25
Max. PD (W) 250m
C(ob) (F) 50p
Derate (Amb) (W/°C) 1.8m
hfe 16
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0n
Polarity PNP
Trans. Freq (Hz) Min. 700k
@VCE (test) (V) .50
Oper. Temp (°C) Max. 150
@Ic (A) 100u
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN 18
SKU 1409221