CHDTA123YEGP
View detailed images (8)

CHDTA123YEGP

SKU: CHDTA123YEGP
CHDTA123YEGP Transistor Silicon PNP CASE: SOT416 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT416
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code YE1
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 1427175
Back