CHDTC114EEGP
View detailed images (8)

CHDTC114EEGP

SKU: CHDTC114EEGP
CHDTC114EEGP Transistor Silicon Pre-Biased-NPN CASE: SOT416 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT416
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code EEB
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1427225
Back