The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
CHDTC115EEGP
View detailed images (8)

CHDTC115EEGP

SKU: CHDTC115EEGP
CHDTC115EEGP Transistor Silicon Pre-Biased-NPN CASE: SOT416 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT416
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SMD Transistor Code EED
Built in Bias Resistor R1 100 kOhm
Built in Bias Resistor R2 100 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1427239
Back