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CHDTC143EEGP
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CHDTC143EEGP

SKU: CHDTC143EEGP
CHDTC143EEGP Transistor Silicon Pre-Biased-NPN CASE: SOT416 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT416
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 8J
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1427270
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