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CHDTC363EKGP
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CHDTC363EKGP

SKU: CHDTC363EKGP
CHDTC363EKGP Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
Built in Bias Resistor R1 6.8 kOhm
Built in Bias Resistor R2 6.8 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1427300
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