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CHDTC363EUGP
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CHDTC363EUGP

SKU: CHDTC363EUGP
CHDTC363EUGP Transistor Silicon Pre-Biased-NPN CASE: SOT323 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT323
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code EUG
Built in Bias Resistor R1 6.8 kOhm
Built in Bias Resistor R2 6.8 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1427301
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