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CHIMD1GP
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CHIMD1GP

SKU: CHIMD1GP
CHIMD1GP Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT457 MAKE: Samsung
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT457
Manufacturer Samsung
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
Built in Bias Resistor R1 22 kOhm
SKU 1427413
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