The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
CHIMD9GP
View detailed images (1)

CHIMD9GP

SKU: CHIMD9GP
CHIMD9GP Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT457 MAKE: Samsung
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT457
Manufacturer Samsung
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 68
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 1427418
Back