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CHIMH60GP
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CHIMH60GP

SKU: CHIMH60GP
CHIMH60GP Transistor Silicon Pre-Biased-NPN CASE: SOT457 MAKE: Samsung
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT457
Manufacturer Samsung
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code I60
Built in Bias Resistor R1 2.2 kOhm
SKU 1427428
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