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CHIMH9GP
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CHIMH9GP

SKU: CHIMH9GP
CHIMH9GP Transistor Silicon Pre-Biased-NPN CASE: SOT457 MAKE: Samsung
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT457
Manufacturer Samsung
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 68
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 1427431
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