CHUMD2GP
View detailed images (4)

CHUMD2GP

SKU: CHUMD2GP
CHUMD2GP Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Generic
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code ED
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1427569
Back