| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
Standard |
| Manufacturer |
Raytheon Semiconductor |
| Vbr CBO |
35 |
| Max. PD (W) |
80m |
| Derate (Amb) (W/°C) |
1.3m |
| hfe |
90 |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
1.2M |
| @VCE (test) (V) |
6.0 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.08 W |
| Maximum Collector-Base Voltage |Vcb| |
35 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
100 °C |
| Transition Frequency (ft): |
1.2 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
90 |
| SKU |
727792 |