| Type | Transistor Silicon NPN | |
| Case | TO105 | |
| Manufacturer | TAG Semiconductors | |
| Vbr CBO | 60 | |
| Vbr CEO | 30 | |
| Max. PD (W) | 450m | |
| C(ob) (F) | 4.0p | |
| hfe | 80 | |
| Icbo Max. @Vcb Max. (A) | .01u | |
| Polarity | NPN | |
| Tr Max. (s) | 26n | |
| t(stor) Max. (S) | 68n+ | |
| Trans. Freq (Hz) Min. | 400M | |
| @VCE (test) (V) | 10 | |
| @Ic (A) | 150m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.35 W | |
| Maximum Collector-Base Voltage |Vcb| | 60 V | |
| Maximum Collector-Emitter Voltage |Vce| | 30 V | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 4 pF | |
| Transition Frequency (ft): | 400 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 80 | |
| SKU | 580316 | |