| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO106 |
| Manufacturer |
TAG Semiconductors |
| Vbr CBO |
30 |
| Vbr CEO |
15 |
| Max. PD (W) |
250m |
| C(ob) (F) |
1.7p |
| hfe |
20 |
| Icbo Max. @Vcb Max. (A) |
.01u |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
960M |
| @VCE (test) (V) |
3.0 |
| @Ic (A) |
30m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.25 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
15 V |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
1.7 pF |
| Transition Frequency (ft): |
960 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
580227 |