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CXT5551
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CXT5551

SKU: CXT5551
CXT5551 Transistor Silicon NPN CASE: SOT89 MAKE: Central Semiconductor
Datasheet
CXT5551 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Central Semiconductor
Vbr CBO 180
Vbr CEO 160
Max. PD (W) 1.2
Max. hFE 250
Min hFE 80
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1.2 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 1282962
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