The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
CXT5551E
View detailed images (12)

CXT5551E

SKU: CXT5551E
CXT5551E Transistor Silicon NPN CASE: SOT89 MAKE: Central Semiconductor
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Central Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 1.2 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 220 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 1428792
Back