The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
D10B1051
View detailed images (1)

D10B1051

SKU: D10B1051
D10B1051 Transistor Silicon NPN CASE: SIP MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case SIP
Manufacturer General Electric
Vbr CEO 15
C(ob) (F) 6.0p
hfe 30
Icbo Max. @Vcb Max. (A) 25u
Polarity NPN
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 1.0
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 722183
Back