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D10B1055
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D10B1055

SKU: D10B1055
D10B1055 Transistor Silicon NPN CASE: SIP MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case SIP
Manufacturer General Electric
Vbr CEO 15
hfe 20
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 1.0
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 722182
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