The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
D11B1055
View detailed images (1)

D11B1055

SKU: D11B1055
D11B1055 Transistor Silicon NPN CASE: SIP MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case SIP
Manufacturer General Electric
Max. PD (W) 100m
hfe 100
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 10
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 722144
Back