The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
D11C1051
View detailed images (1)

D11C1051

SKU: D11C1051
D11C1051 Transistor Silicon NPN CASE: SIP MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case SIP
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 100m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.0m
hfe 100
Icbo Max. @Vcb Max. (A) 25n
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 722143
Back