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D11C1057
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D11C1057

SKU: D11C1057
D11C1057 Transistor Silicon NPN CASE: SIP MAKE: GEC Plessey - GPS
Product specifications
Type Transistor Silicon NPN
Case SIP
Manufacturer GEC Plessey - GPS
Vbr CBO 45
Vbr CEO 25
Max. PD (W) 100m
C(ob) (F) 20p
Derate (Amb) (W/°C) 1.0m
hfe 30
Icbo Max. @Vcb Max. (A) .05u
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 722141
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