D11C3F1

SKU: D11C3F1

D11C3F1 Transistor Silicon NPN CASE: TO3 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	General Electric
Vbr CEO	50
Max. PD (W)	1.1
Max. hFE	120
Min hFE	40
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	25u
Polarity	NPN
R(sat) (Û)	1.7
Derate Above 25°C	18m
Trans. Freq (Hz) Min.	130k
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.1 W
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	0.13 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	722126

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